Compound buried layer SOI high voltage device with a step buried oxide

• 来源期刊: 中国物理B(英文版)
• 学科: 工学
• 关键词: SOI 埋氧层 高压器件 复合 LDMOS 金属氧化物 埋层 击穿电压
• 年，卷（期）: 2011,（7）
• 页码范围: 077304.1-077304.6
• 页数: 2页
• 分类号: TN386.1
• 语种: 英文
• DOI: 10.1088/1674-1056/20/7/077304

摘要

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by thes...