Transformation from AA to AB-Stacked Bilayer Graphene on α-SiO2 under an Electric Field

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（8）
• 页码范围: 266-269
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/8/087303

摘要

The energetic and electronic structure of bilayered graphene(BLG) with AA stacking arrangement on a SiO2 substrate is investigated in the presence of an electric field F of different intensities by ab initio density functional calculations.The AA-stacked bilayer graphene is stable on the SiO2 substrate in the absence of an electric field.However, as F increases, the AA-stacked bilayer graphenes are gradually shifted with each other and finally transfers into AB-stacked bilayer graphenes.The bandgap is accordingly changed.