Luminescence properties of InxGa1-xN (x~0.04) films grown by metal organic vapour phase epitaxy

• 来源期刊: 中国物理B(英文版)
• 学科: 工学
• 关键词: 气相外延生长 有机金属 发光特性 薄膜 氮化铟镓 质谱测量 X射线光谱 组合显示
• 年，卷（期）: 2011,（7）
• 页码范围: 076101.1-076101.8
• 页数: 2页
• 分类号: TN304.23
• 语种: 英文
• DOI: 10.1088/1674-1056/20/7/076101

摘要

In x Ga 1-x N (x ~ 0.04) films are grown by metal organic vapour phase epitaxy.For the samples grown on GaN directly,the relaxation of InGaN happens when its thickness is beyond a critical value.A broad band is observed in the luminescence spectrum,and its intensity increases with the increasing degree of relaxation.Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN.The combination of the energy-dispersive X-ray spectra and the cathod...