Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（11）
• 页码范围: 198-201
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/11/116803

摘要

The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented,indicating the temperature of the reaction species.The gas phase pre-reaction can be modulated by several factors or conditions.Simulations verify the relationships between temperature and pyrolysis of precursors,and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution.The experimental results agree with the simulations.ZnO is a wurtzite structure direct-gap semiconductor.Because of its wide bandgap of 3.37eV at room temperature and large exciting binding energy of 60 meV,ZnO is an excellent material for efficient short-wavelength optoelectronic light-emitting devices and detectors.[1] Metal-organic chemical vapor deposition (MOCVD) is a promising method to grow highquality Ⅲ-Ⅴ semiconductor materials,such as GaN and GaAs,[2-5] and is also believed to be suitable for ZnO growth.[6]