Sunlight loss for femtosecond microstructured silicon with two impurity bands

• 来源期刊: 中国物理B(英文版)
• 学科: 工学
• 关键词: 飞秒激光脉冲 微结构硅 杂质带 阳光 硅太阳能电池 亏损 硅片表面 含硫气体
• 年，卷（期）: 2011,（7）
• 页码范围: 074202.1-074202.5
• 页数: 1页
• 分类号: TN24
• 语种: 英文
• DOI: 10.1088/1674-1056/20/7/074202

摘要

Black silicon,produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas,is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells.Taking chalcogen as an example,we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te 0 (0.307 eV) and Te + (0.411 eV) are doped into microstructured silicon.Finally,problems needed to...