Simulation of the light extraction efficiency of nanostructure light-emitting diodes

• 来源期刊: 中国物理B(英文版)
• 学科: 工学
• 关键词: 光提取效率 纳米结构 发光二极管 数值模拟 InGaN 夹层结构 氮化铟镓 平面结构
• 年，卷（期）: 2011,（7）
• 页码范围: 077804.1-077804.4
• 页数: 1页
• 分类号: TN364.2
• 语种: 英文
• DOI: 10.1088/1674-1056/20/7/077804

摘要

The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or ...