Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio Frequency Circuits

• 作者: Christian Gontrand Fengyuan Sun Francis Calmon Jean-Etienne Lorival Mohamed Abouelatta-Ebrahim Olivier Valorge
• 来源期刊: 电路与系统(英文)
• 学科: 数学
• 关键词: Through Silicon Via (TSV) Green’s Function Transmission Line Model Radio Frequency (RF) Transfer IMPEDANCE EXTRACTION
• 年，卷（期）: dlyxtyw,（2）
• 页码范围: 126-135
• 页数: 10页
• 分类号: O1

摘要

3D chip stacking is considered known to overcome conventional 2D-IC issues, using through silicon vias to ensure vertical signal transmission. From any point source, embedded or not, we calculate the impedance spread out;our ultimate goal will to study substrate noise via impedance field method. For this, our approach is twofold: a compact Green function or a Transmission Line Model over a multi-layered substrate is derived by solving Poisson’s equation analytically. The Discrete Cosine Transform (DCT) and its variations are used for rapid evaluation. Using this technique, the substrate coupling and loss in IC’s can be analyzed. We implement our algorithm in MATLAB;it permits to extract impedances between any pair of embedded contacts. Comparisons are performed using finite element methods.