Modelling of Thermal Behavior N-Doped Silicon Resistor

• 作者: Ali Boukabache Fouad Kerrour Patrick Pons
• 来源期刊: 传感技术(英文)
• 学科: 医学
• 关键词: SILICON TCRs MOBILITY DOPING Temperature
• 年，卷（期）: 2012,（3）
• 页码范围: 132-137
• 页数: 6页
• 分类号: R73

摘要

From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.