Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（6）
• 页码范围: 249-252
• 页数: 4页
• 语种: 英文
• DOI: 10.10S8/0256-307X/29/6/067302

摘要

The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress.With increasing stress time,the device exhibits a large positive drift of threshold voltage while maintaining a stable sub-threshold swing and a constant field-effect mobility of channel electrons.The threshold voltage drift is explained by charge trapping at the high-density trap states near the channel/dielectric interface,which is confirmed by photo-excited charge-collection spectroscopy measurement.