A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（10）
• 页码范围: 174-177
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/10/107202

摘要

A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage (LOV)is proposed.Its mechanism can be explained by the field-controlled energy band model.This model reveals that the electric field in the AlGaN layer alters the energy band to result in a variation of the two-dimensional electron gas (2DEG) at AlGaN/GaN interface;the field can be changed by the thickness d of the AlGaN layer and the applied bias.As the d reduces below the critical thickness,the 2DEG vanishes and then the channel is pinched off.Therefore,the threshold voltage of HA-FER can be designed as low as 0 V leading to LOV (＜1 V).The analytical characteristic of the HA-FER is calculated and validated by the simulated results.These results also demonstrate that the forward properties of HA-FER are superior to the conventional SBD due to the high Schottky barrier.