Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

• 来源期刊: 中国物理B（英文版）
• 关键词: fin field-effect transistor single event transient temperature dependence drain bias dependence
• 年，卷（期）: 2012,（8）
• 页码范围: 590-594
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/21/8/089401

摘要

In this paper,we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.