Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2012,（12）
• 页码范围: 68-70
• 页数: 3页
• 语种: 英文
• DOI: 10.3788/COL201210.122501

摘要

InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) are fabricated by a thermal selective wetoxidation confinement technique.Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs.The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time.Compared with a unannealed laser device,the light output power increases by about 12％.An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device.The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.