Experimentally distinguishing electro-optic effects in silicon

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2012,（8）
• 页码范围: 53-57
• 页数: 5页
• 语种: 英文
• DOI: 10.3788/COL201210.082301

摘要

Different electro-optic effects,such as Kerr effect,Pockels effect induced by the electric field or strain,and plasma dispersion effect exist in silicon.Experimentally distinguishing these effects is necessary for designing silicon-based electro-optic devices.According to their different polarization dependencies and frequency responses,these effects are measured and distinguished successfully via a transverse electro-optic modulation experiment based on the near-intrinsic silicon sample.The results indicate that Pockels effect induced by the electric field or strain is primary among these effects in the near-intrinsic silicon sample.