A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（9）
• 页码范围: 162-165
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/9/097301

摘要

Based on the differential Ohm's law and Poisson's equation,an analytical model of the drain current for a-Si:H thin-film transistors is developed.This model is proposed to elaborate the temperature effect on the drain current,which indicates that the drain current is linear with temperature in the range of 290-360K,and the results fit well with the experimental data.