Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（9）
• 页码范围: 219-221
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/9/098502

摘要

Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency.By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film,followed by a low damage dry etching process,a p-side-up LED with a roughened surface has been fabricated.Compared to a conventional LED with plane surface,the light output of LEDs with nanoporous p-GaN surface increases up to 71％ and 36％ at applied currents of 1 mA and 20mA,respectively.Meanwhile,the electrical characteristics are not degraded obviously after surface roughening.