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摘要:
Mechanical properties of silicon nanobeams are of prime importance in nanoelectromechanical system applications.A numerical experimental method of determining resonant frequencies and Young's modulus of nanobeams by combining finite element analysis and frequency response tests based on an electrostatic excitation and visual detection by using a laser Doppler vibrometer is presented in this paper.Silicon nanobeam test structures are fabricated from silicon-on-insulator wafers by using a standard lithography and anisotropic wet etching release process,which inevitably generates the undercut of the nanobeam clamping.In conjunction with three-dimensional finite element numerical simulations incorporating the geometric undercut,dynamic resonance tests reveal that the undercut significantly reduces resonant frequencies of nanobeams due to the fact that it effectively increases the nanobeam length by a correct value △L,which is a key parameter that is correlated with deviations in the resonant frequencies predicted from the ideal Euler-Bernoulli beam theory and experimentally measured data.By using a least-square fit expression including △L,we finally extract Young's modulus from the measured resonance frequency versus effective length dependency and find that Young's modulus of a silicon nanobeam with 200-nm thickness is close to that of bulk silicon.This result supports that the finite size effect due to the surface effect does not play a role in the mechanical elastic behaviour of silicon nanobeams with thickness larger than 200 nm.
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篇名 Mechanical properties of silicon nanobeams with an undercut evaluated by combining the dynamic resonance test and finite element analysis
来源期刊 中国物理B(英文版) 学科
关键词 silicon nanobeams with undercut mechanical properties mechanical testing finite element method
年,卷(期) 2012,(8) 所属期刊栏目
研究方向 页码范围 330-338
页数 9页 分类号
字数 语种 英文
DOI 10.1088/1674-1056/21/8/086101
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silicon nanobeams with undercut
mechanical properties
mechanical testing
finite element method
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中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
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17050
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