A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（1）
• 页码范围: 268-271
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/1/018102

摘要

GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH4 in a metal organic chemical vapor deposition system.The influence of the SiH4 pre-treatment conditions on the SiC surface is carefully investigated.It is found that SiH4 could react with the SiC surface oxide,which will change the surface termination.Moreover,our experiments demonstrate that SiH4 pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.