Monolithic integration of an AlGaN/GaN metalinsulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

• 来源期刊: 中国物理B（英文版）
• 关键词: AlGaN/GaN AlGaN/GaN heterostructures metal-insulator field-effect transistor fieldcontrolled diode
• 年，卷（期）: 2012,（8）
• 页码范围: 459-464
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/21/8/087305

摘要

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor (MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias (＞ 70 V/μm) and suppress the leakage current (＜ 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50％ in conduction without forward current degeneration.