Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer

• 来源期刊: 中国物理B（英文版）
• 关键词: 4H SiC bipolar junction transistors common-emitter current gain specific onresistance open-base breakdown voltage
• 年，卷（期）: 2012,（8）
• 页码范围: 570-573
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-1056/21/8/088502

摘要

In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC =28.6 mA (JC =183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance (Rsp-on) is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N+ emitter layer sheet resistance are 1.7× 10 3 Ω·cm2 and 150 Ω/□,respectively.