Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering

• 来源期刊: 光电子快报(英文版)
• 学科: 工学
• 年，卷（期）: 2013,（3）
• 页码范围: 198-200
• 页数: 3页
• 分类号: TN304.055
• 语种: 中文

摘要

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1*10-4 Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36*1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.