A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（8）
• 页码范围: 209-211
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/8/088502

摘要

We report the demonstration of an n-channel lateral Si tunnel field-effect transistor (TFET) with a single crystalline Ge source fabricated using the gate-last process.The p+ Ge source was in situ doped and grown at 320°C.An abrupt interface between Ge source and Si channel with type-lⅡ band alignment and a steep source doping profile (～1.5nm/decade) formed the tunneling junction.This alows the realization of a TFET with a steep subthreshold swing of 49mY/decade at room temperature and an ION/IOFF ratio of 107.