Resonant Raman scattering in GaN single crystals and GaN-based heterostructures: feasibility for laser cooling
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摘要:
The recent progress on Raman scattering in GaN single crystals and GaN/AlN heterostructures is reviewed.Anti-Stokes Raman scattering is used to determine electron-phonon scattering time and decay time constant for longitudinal-optical phonons.In a typical high electron mobility transistor based on GaN/AlN heterostructures,strong resonances are reached for the first-order and second-order Raman scattering processes.Therefore,both Stokes and anti-Stokes Raman intensities are dramatically enhanced.The feasibility for laser cooling of a nitride structure is studied.A further optimization will enable us to reach the threshold for laser cooling.Raman scattering have potential applications in up-conversion lasers and laser cooling of nitride ultrafast electronic and optoelectronic devices.