High-performance InAs/GaAs quantum dot laser with dot layers grown at 425 ℃

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2013,（6）
• 页码范围: 39-42
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201311.061401

摘要

We investigate InAs/GaAs quantum dot (QD) lasers grown by gas source molecular beam epitaxy with different growth temperatures for InAs dot layers.The same laser structures are grown,but the growth temperatures of InAs dot layers are set as 425 and 500 ℃,respectively.Ridge waveguide laser diodes are fabricated,and the characteristics of the QD lasers are systematically studied.The laser diodes with QDs grown at 425 ℃ show better performance,such as threshold current density,output power,internal quantum efficiency,and characteristic temperature,than those with QDs grown at 500 ℃.This finding is ascribed to the higher QD density and more uniform size distribution of QDs achieved at 425 ℃.