Effect of Laser Pulse Width on the Laser Lift-off Process of GaN Films

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（1）
• 页码范围: 83-86
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/1/014203

摘要

GaN-based semiconductors have been widely used for optoelectronic devices such as blue light-emitting diodes and laser diodes.[1,2] Due to the lack of native substrates,GaN films are commonly grown on sapphire substrates.Since sapphire is an insulator,it is necessary to have the ohmic contacts placed on the top side of the device.This requires additional photolithography and dry etch steps.Moreover,the dissipation of heat through sapphire is also hampered.Recently,pulsed ultraviolet (UV) laser lift-off (LLO) techniques,in conjunction with wafer bonding,have been widely used to remove the sapphire substrate and then transfer GaN films to other substrates such as Si and Cu.