The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111)Substrates by using MOCVD

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（2）
• 页码范围: 221-224
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/2/028101

摘要

Owing to their superior intrinsic properties,GaNbased materials are very promising semiconductor materials for applications in optoelectronic devices,as well as in high power,high frequency and high temperature electronic devices.However,a lack of suitable substrate hampers their application in these fields.Generally,sapphire,SiC and Si are the most used as substrates.[1-3] Due to its low cost,large-size,high electrical,thermal conductivities,and potential applications in optoelectronic integrated circuits,Si has attracted more and more attention for use as a substrate for GaN growth.