Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2013,（11）
• 页码范围: 87-90
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201311.112501.

摘要

The nonlinear photoresponse to a 1.56-μm infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined.The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage.The electric field-induced DFA remarkably affects the native DFA in SI GaAs.The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.