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摘要:
Thin films of copper titanium oxide were deposited by metal organic chemical vapour deposition technique from the synthesized single solid source precursor, copper titanium acetylacatonate Cu [Ti(C5H7O2)3] at the deposition temperature of 420°C. The deposited films were characterized using Rutherford Backscattering Spectroscopy, Scanning Electron Microscopy with Energy Dispersive X-Ray facility attached to it, X-Ray Diffractometry, UV-Visible Spectrometry and van-der Pauw Conductivity measurement. Results show that the thickness of the prepared film is determined as 101.236 nm and the film is amorphous in structure, having average grain size of approximately 1 μm. The optical behaviour showed that the absorption edge of the film was at 918 nm near infrared with corresponding direct energy band gap of 1.35 eV. The electrical characterization of the film gave the values of resistivity, sheet resistance and conductivity of the film as 3.43 × 10-1 Ω-cm, 3.39 × 106 Ω/square and 2.91 (Ω-cm)-1 respectively.
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篇名 Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Copper Titanium Oxide (Cu-Ti-O) Thin Films from Single Solid Source Precursor
来源期刊 现代物理(英文) 学科 化学
关键词 Thin Film COPPER Titanium Oxide Metalorganic Chemical VAPOUR DEPOSITION (MOCVD)
年,卷(期) 2013,(12) 所属期刊栏目
研究方向 页码范围 1-6
页数 6页 分类号 O6
字数 语种
DOI
五维指标
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Thin
Film
COPPER
Titanium
Oxide
Metalorganic
Chemical
VAPOUR
DEPOSITION
(MOCVD)
研究起点
研究来源
研究分支
研究去脉
引文网络交叉学科
相关学者/机构
期刊影响力
现代物理(英文)
月刊
2153-1196
武汉市江夏区汤逊湖北路38号光谷总部空间
出版文献量(篇)
1826
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0
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0
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