Graphene Domains Synthesized on Electroplated Copper by Chemical Vapor Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（2）
• 页码范围: 225-227
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/2/028102

摘要

Graphene is a single layer of carbon atoms packed in a hexagonal lattice.[1] Its significant properties and potential applications[2,3] have motivated the synthesis of high-quality graphene growth methods.Various methods have been developed for the formation of graphene so far,including micromechanical cleavage,[1] thermal decomposition of SiC surfaces,[4,5] graphene oxide followed by chemical reduction,[6,7] and catalyst-assisted chemical vapor deposition (CVD) on metals[8] such as Ru,[9,10] Ni[11,12]and Cu.[13,14,15] In particular,it has been shown that high-quality graphene can be better synthesized on Cu by CVD.Recently,there have been many studies on graphene domains synthesized on Cu foils.