Electric and Magnetic Properties and Magnetoelectric Effect of the Ba0.8Sr0.2TiO3/CoFe2O4 Heterostructure Film by Radio-Frequency Magnetron Sputtering

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（4）
• 页码范围: 185-188
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/4/047502

摘要

Multiferroic magnetoelectric (ME) materials not only exhibit ferroelectricity and ferromagnetism simultaneously,but also the magnetoelectric coupling effect,which is defined as induced electric polarization under applied external magnetic field or induced magnetization by the external electric field.[1,2]Recently,multiferroic magnetoelectric materials have stimulated increasing interest due to the extensive and potential applications in sensors,memories,actuators,transducers,etc.[3,4] The room-temperature single-phase multiferroic compounds are very scarce due to the fact that the ferroelectricity and ferromagnetism are incompatible.[1,2,5] However,the multiferroic magnetoelectric materials consisting of the alternating ferroelectric and ferromagnetic phases were proposed in the form of bulk or film.Recently,due to the incorporation into microelectronic technical applications,nanocomposite films on substrates have stimulated increasing interest.Among them,the vertical heterostructure films with a spinel CoFe2O4 nanopillar embedded in the perovskite BaTiO3 matrix on the SrTiO3 (001) single crystal substrate were prepared,which show strong magnetoelectric coupling of the order parameters through elastic interactions between the two phases.[6,7] However,the ME voltage coefficient was not directly observed in such vertical heterostructure films due to the large leakage current arising from the low resistivity of the CoFe2O4 phase penetrating into the perovskite BaTiO3 matrix.Thereafter,many layered heterostructure composite films consisting of alternating perovskite ferroelectric layer and spinel magnetic layer have been prepared.[8-12] As compared to the vertical heterostructure films,the direct ME effect can be observed in layered heterostructure composite films due to insulating the low resistive magnetic layer with an insulating ferroelectric layer.