篇名 | The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells | ||
来源期刊 | 中国物理B(英文版) | 学科 | |
关键词 | single event upset multi-node charge collection recovery,ultra-low ower voltage | ||
年,卷(期) | 2013,(2) | 所属期刊栏目 | |
研究方向 | 页码范围 | 591-594 | |
页数 | 4页 | 分类号 | |
字数 | 语种 | 英文 | |
DOI | 10.1088/1674-1056/22/2/029402 |