Theoretical D* Optimization of N+-p Pb<sub>1-x</sub>Sn<sub>x</sub>Se Long-Wavelength (8 - 11 μm) Photovoltaic Detector at 77 K

• 作者: Binbin Weng Caleb Chang Jijun Qiu Lihua Zhao Zhisheng Shi
• 来源期刊: 检测(英文)
• 学科: 医学
• 关键词: Pb1-xSnxSe LIFETIME Resistant-Area Product Quantum Efficiency DETECTIVITY
• 年，卷（期）: 2014,（1）
• 页码范围: 1-6
• 页数: 6页
• 分类号: R73

摘要

In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered. Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity (D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.