Remote-Plasma-Assisted Deposition of Pentacene Layer Using Atomic-Hydrogen

• 作者: Miyuki Onodera Satoshi Yamauchi Takatoshi Minakuchi
• 来源期刊: 结晶过程及技术期刊(英文)
• 学科: 医学
• 关键词: Remote-Plasma-Assisted DEPOSITION PENTACENE HYDROGEN PLASMA ATOMIC HYDROGEN
• 年，卷（期）: 2014,（1）
• 页码范围: 14-19
• 页数: 6页
• 分类号: R73

摘要

Pentacene thin layers were deposited on Si with the native oxide at 80°C by remote-plasma-assisted deposition (RPAD) using hydrogen-plasma cell to supply atomic hydrogen radicals. The deposition rate was increased by RPAD comparing to that by non-excited hydrogen gas supply whereas thermal evaporation rate of pentacene from crucible was same in the both process. DFM and XRD studies showed the grain laterally grew in the thin film phase with the size above 10 μm by RPAD. First-principles molecular orbital calculations suggested pentacene is evaporated from crucible as the trimer or larger cluster but atomic hydrogen penetrated into the cluster enhances cracking of pentacene clusters to the monomer.