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摘要:
Nanocomposite films based on poly (3,4-ethylenedioxy thiophene) (PEDOT), functionalized single-walled carbon nanotubes and different dopants were studied. It was fabricated by a simple oxidative electropolymerization method. The dopant substances used were SDS (Sodium dodecyl sulfate) and tiron (1,2-Dihydroxybenzene-3,5-disulfonic acid disodium salt hydrate). These nano-composite films were grown electrochemically from aqueous solutions such that constituents were deposited simultaneously onto substrate electrode. The synthetic, morphological and electrical properties of the nanocomposite films obtained were compared. Scanning electron microscopy (SEM) revealed that the composite films consisted of nanoporous networks of SWCNTS (single-walled carbon nanotubes) coated with polymeric film. Cyclic voltammetry (CV), electro-chemical impedance spectroscopy (EIS) and FT-IR spectroscopy demonstrated that these composite films had similar electrochemical response rates to pure polymeric films but a lower resistance and much improved mechanical integrity. The negatively charged functionalized carbon nano-tubes (CNTSF) served as anionic dopant during the electropolymerization to synthesize polymer/CNTSF composite films. The specific electrochemical capacitance of the composite films is a significantly higher value than that for pure polymer films prepared similarly. Using these composite films, the modified electrodes with improved properties were obtained. (In this paper, for simplicity, the SWANTs-COOH group will be noted CNTsF which means functionalized carbon nanotubes.)
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篇名 Nanocomposites Based on Conducting Polymers and Functionalized Carbon Nanotubes with Different Dopants Obtained by Electropolymerization
来源期刊 表面工程材料与先进技术期刊(英文) 学科 化学
关键词 NANOCOMPOSITE Films FUNCTIONALIZED Carbon NANOTUBES SEM CAPACITANCE Real Impedance
年,卷(期) bmgcclyxjjsqkyw_2014,(3) 所属期刊栏目
研究方向 页码范围 164-179
页数 16页 分类号 O6
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NANOCOMPOSITE
Films
FUNCTIONALIZED
Carbon
NANOTUBES
SEM
CAPACITANCE
Real
Impedance
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表面工程材料与先进技术期刊(英文)
季刊
2161-4881
武汉市江夏区汤逊湖北路38号光谷总部空间
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211
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