Preparation of multi-wavelength infrared laser diode

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2014,（3）
• 页码范围: 194-197
• 页数: 4页
• 语种: 中文
• DOI: 10.1007/s11801-014-4019-5

摘要

We prepare a new type of multi-wavelength infrared laser diode with four chips,three wavelengths (865 nm,905 nm and 1064 nm) and two working modes (pulse and single).The preparation technology of the diode includes two key processes:heat-sink and packaging processing technique to package four different chips on a same heat-sink.The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.