Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2014,（3）
• 页码范围: 202-205
• 页数: 4页
• 语种: 中文
• DOI: 10.1007/s11801-014-4007-9

摘要

Hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously.Additionally,the microstructural properties of the μc-SiGe:H films are also studied.By combining Raman,Fourier transform infrared (FTIR) and X-ray fluoroscopy (XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.