Trap States in Al2Oa InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2014,（3）
• 页码范围: 137-139
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/31/3/037302

摘要

We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAIN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition.Trap densities,trap energies and time constants are determined by frequency-dependent conductance measurements.A high trap density of up to 1.6 × 1014 cm-2eV-1 iS observed,which may be due to the lack of the cap layer causing the vulnerability to the subsequent high temperature annealing process.