Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2014,（5）
• 页码范围: 191-194
• 页数: 4页
• 语种: 中文
• DOI: 10.1088/0256-307X/31/5/058503

摘要

We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with low-temperature Si2 H6 passivation.The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm-2.NBTI char-acterization is performed to investigate the linear transconductance (GM,lin) degradation and threshold voltage shift (△VTH) under NBT stress.Ge pMOSFETs with a 10yr lifetime at an operating voltage of-0.72 V are demonstrated.The impact of the Si2H6 passivation temperature is studied.As the passivation temperature increases from 350℃ to 550℃,the degradation of NBTI characteristics,e.g.,GM,lin loss,△VTH and an operating voltage for a lifetime of 10yr,is observed.