Influence of Thickness on the Photosensing Properties of Chemically Synthesized Copper Sulfide Thin Films

• 作者: Abhijeet Ravsaheb Shelke Abhiman Dattatray Dhondge Amar Maruti Patil Chatur Pundlik Sawant Narayani Madhukar Gosavi Nishad Gopal Deshpande Sunil Rameshgir Gosavi
• 来源期刊: 凝固态物理国际期刊(英文)
• 学科: 化学
• 关键词: Copper SULFIDE (CuS) Chemical BATH Deposition (CBD) Thin Film X-Ray DIFFRACTION (XRD) Field Emission Scanning Electron Microscopy (FESEM) PHOTOSENSITIVITY
• 年，卷（期）: ngtwlgjqkyw_2015,（1）
• 页码范围: 1-9
• 页数: 9页
• 分类号: O6

摘要

We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.