E)evelopment of 8-inch Key Processes for nsulated-Gate Bipolar Transistor

• 来源期刊: 中国工程科学(英文版)
• 学科: 工学
• 关键词: 绝缘栅双极晶体管 IGBT技术 金属氧化物半导体 IGBT模块 高压技术 跨越式发展 DMOS 牵引系统
• 年，卷（期）: 2015,（3）
• 页码范围: 361-366
• 页数: 6页
• 分类号: TN322.8
• 语种: 中文

摘要

Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.