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摘要:
As technology shrinks in modern era the demand on high speed, low power consumption and small chip area in microprocessors is come into existence. In this paper we have presented a new class of domino circuit design for low power consumption, faster circuit speed and high performance. Due to wide fan-in domino logic, its logic gate suffer from noise sensitivity, if we improve sensitivity, sub-threshold and gate oxide leakage current dominate in evaluation network, which increases the power consumption and reduces the performance of the circuit. The proposed circuit improves the dynamic power consumption and reduces the delay which improves the speed of the circuit. Simulation is performed in BISM4 Cadence environment at 65 nm process technology, with supply voltage 1 V at 100 MHz frequency and bottleneck operating temperature of 27°C with CL = 1 fF. From the result average power improvement by proposed circuit 1 & 2 for 8 input OR gate is 10.1%, 15.28% SFLD, 48.56%, 51.49% CKD, 55.17%, 57.71% HSD and improvement of delay is 1.10%, 12.76% SFLD, 19.13%, 28.63% CKD, 4.32%, 15.59% HSD, 19.138%, 44.25% DFD respectively.
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篇名 A Novel High-Performance Lekage-Tolerant, Wide Fan-In Domino Logic Circuit in Deep-Submicron Technology
来源期刊 电路与系统(英文) 学科 医学
关键词 High Speed Integrated CIRCUIT Dynamic LOGIC CIRCUIT Unity Noise GAIN (UNG) DOMINO LOGIC CIRCUIT Noise Immunity
年,卷(期) 2015,(4) 所属期刊栏目
研究方向 页码范围 103-111
页数 9页 分类号 R73
字数 语种
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节点文献
High
Speed
Integrated
CIRCUIT
Dynamic
LOGIC
CIRCUIT
Unity
Noise
GAIN
(UNG)
DOMINO
LOGIC
CIRCUIT
Noise
Immunity
研究起点
研究来源
研究分支
研究去脉
引文网络交叉学科
相关学者/机构
期刊影响力
电路与系统(英文)
月刊
2153-1285
武汉市江夏区汤逊湖北路38号光谷总部空间
出版文献量(篇)
286
总下载数(次)
0
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0
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