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We fabricated europium and cerium co-doped tantalum (V) oxide (Ta2O5: Eu, Ce) thin films using our co-sputtering method for the first time, and evaluated photoluminescence (PL) properties of the films after annealing at 600°C - 1100°C for 20 min. Four remarkable PL peaks at wavelengths of 600, 620, 700, and 705 nm were observed from the film annealed at 900°C. The intensities of the 700- and 705-nm peaks due to the 5D0 → 7F4 transition of Eu3+ were much stronger than those of the 600-nm (5D0 → 7F1) and 620-nm (5D0 → 7F2) peaks of the film annealed at 900°C. It seems that energy transfer from Ce3+ to Eu3+ occurs in the film, and much energy is selectively used for the 5D0 →7F4 and 5D0 →?7F1?transitions. Such a Ta2O5: Eu, Ce co-sputtered thin film seems to be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.
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篇名 Photoluminescence Properties of Europium and Cerium Co-Doped Tantalum-Oxide Thin Films Prepared Using Co-Sputtering Method
来源期刊 材料科学与化学工程(英文) 学科 化学
关键词 TANTALUM Oxide EUROPIUM CERIUM Co-Sputtering PHOTOLUMINESCENCE
年,卷(期) clkxyhxgcyw_2015,(8) 所属期刊栏目
研究方向 页码范围 30-34
页数 5页 分类号 O6
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TANTALUM
Oxide
EUROPIUM
CERIUM
Co-Sputtering
PHOTOLUMINESCENCE
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材料科学与化学工程(英文)
季刊
2327-6045
武汉市江夏区汤逊湖北路38号光谷总部空间
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489
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