Comparative research on“high currents”induced by single event latch-up and transient-induced latch-up

• 作者: 上官士鹏 余永涛 封国强 郑汉生 陈睿 韩建伟 马英起
• 来源期刊: 中国物理B（英文版）
• 关键词: single event latch-up transient-induced latch-up electro-static discharge pulsed laser
• 年，卷（期）: 2015,（4）
• 页码范围: 046103-1-046103-6
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/4/046103

摘要

By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the “high current”, relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between “high current”induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the“high current”induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU.