Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction Model

• 作者: Gregorio Flores-Carrasco Javier Martínez-Juárez José Alberto Luna-López José álvaro David Hernández de la Luz José Francisco Javier Flores-Gracia Néstor David Espinosa-Torres
• 来源期刊: 现代物理(英文)
• 学科: 化学
• 关键词: GLOBAL Reactions Model SILICON Rich-Oxide Defects LPCVD Luminescence
• 年，卷（期）: 2015,（11）
• 页码范围: 1679-1694
• 页数: 16页
• 分类号: O6

摘要

The Global Reaction Model describes a set of chemical reactions that can potentially occur during the process of obtaining silicon rich oxide (SRO) films, regardless of the technique used to grow such films which are an outside stoichiometry material. Particularly, chemical reactions that occur during the process of growing of SRO films by LPCVD technique are highlighted in this model. We suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the density functional theory, the contribution that they may have to the phenomenon of luminescence which is measured in SRO films. Also, we have calculated the opto-electronic properties of SRO films. The suggested model provides enough information required to identify the molecular structures resulting from the presence of defects in SRO films and also those corresponding to charged structures. It is also possible to detect the molecular structures which are modified due to the effect of heat treatment, and identify the presence of different oxidation states inclusive the formation of siloxanes.