The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

• 作者: A. G. Gulyamov A. Q. Ergashev B. T. Abdulazizov Gafur Gulyamov
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: PHASE Portraits The GENERATION of CHARGE Carriers The Recombination of CHARGE Carriers
• 年，卷（期）: xdwlyw_2015,（13）
• 页码范围: 1921-1926
• 页数: 6页
• 分类号: R73

摘要

Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.