Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

• 作者: 周浪 周耐根 梁晓军 袁吉仁 邓新华 黄海宾
• 来源期刊: 中国物理B（英文版）
• 关键词: impurity photovoltaic effect responsivity photodetector
• 年，卷（期）: 2015,（4）
• 页码范围: 048501-1-048501-4
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/4/048501

摘要

The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic (IPV) effect is inves-tigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the con-duction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.