Hysteresis loop behaviors of ferroelectric thin films:A Monte Carlo simulation study

• 来源期刊: 中国物理B（英文版）
• 关键词: ferroelectrics bismuth titanate hysteresis loop dipolar defects
• 年，卷（期）: 2015,（11）
• 页码范围: 117701-1-117701-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/11/117701

摘要

The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole–dipole interaction in the transversal (x–y) direction, and the nearest dipole–dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.