The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

• 作者: Agasi S. Hovhannisyan Aram A. Sahakyan Armenuhi A. Khachatryan Ashot S. Vardanyan Bagrat A. Grigoryan Eleonora A. Hakhverdyan Gayane A. Amatuni Hrant N. Yeritsyan Laura S. Hakobyan Norair E. Grigoryan Vachagan V. Harutyunyan Vahan A. Sahakyan Vasili M. Tsakanov
• 来源期刊: 现代物理(英文)
• 学科: 化学
• 关键词: IMPURITY OXYGEN Silicon Crystal Electron Irradiation Infrared (IR) Absorption Spectra ANNEALING VACANCY INTERSTITIAL ATOM
• 年，卷（期）: 2015,（14）
• 页码范围: 2050-2057
• 页数: 8页
• 分类号: O6

摘要

Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.