Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

• 作者: 吕利 周宇 孙建东 张晓渝 李欣幸 秦华 谭仁兵
• 来源期刊: 中国物理B（英文版）
• 关键词: radio-frequency circuit high electron mobility transistor
• 年，卷（期）: 2015,（10）
• 页码范围: 105201-1-105201-4
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/105201

摘要

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrica-tion process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capaci-tance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.