Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

• 作者: 任晓敏 刘凯 刘锋 康超 房文敬 段晓峰 汪君楚 费嘉瑞 陈庆涛 黄永清
• 来源期刊: 中国物理B（英文版）
• 关键词: uni-traveling-carrier photodetector device growth and fabrication responsivity 3-dB bandwidth
• 年，卷（期）: 2015,（10）
• 页码范围: 108506-1-108506-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/108506

摘要

A top-illuminated circular mesa uni-traveling-carrier photodetector (UTC-PD) is proposed in this paper. By employ-ing Gaussian graded doping in InGaAs absorption layer and InP depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W (the external quantum effi-ciency of 86%) is obtained at 1550 nm with a 40-μm diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 nA and the 3-dB bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of 3V.