A C-band 55%PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

• 作者: 卢阳 张宏鹤 张濛 曹梦逸 赵博超 郑佳欣 郝跃 马晓华
• 来源期刊: 中国物理B（英文版）
• 关键词: AlGaN/GaN HEMT high power-added efficiency amplifier microwave and millimeterwave de-vices and circuits load pull
• 年，卷（期）: 2015,（10）
• 页码范围: 107305-1-107305-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/107305

摘要

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency ( f0 and 2 f0). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15%and an associated power gain of 28.7 dB, which is an outstanding performance.